Abstract
The electrical characteristics of Au - (n-type) InP Schottky barriers fabricated on etched surfaces are reported. The barrier height of the junction is low (0·40 eV), and from this value of barrier height the surface state model of {110} etched InP is shown to be in line with the general picture for other III-V compounds. Measurements are also reported of n-type InP carrier concentration determination in the range 5×1015-4×1016 cm−3 using conventional Schottky barrier C-V analysis. For voltages greater than a few tenths of a volt reverse bias this procedure yields values of carrier concentration that are in good agreement with values determined by Hall measurements. Below this voltage the capacitance data are no longer representative of carrier concentration in the normal way due to the onset of incomplete depletion of mobile carriers in the barrier region.
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