Abstract
InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) with fmax = 425 GHz and fτ = 141 GHz using transferred-substrate technology are reported. This is the highest reported fmax for a DHBT. The breakdown voltage BVCEO is 8 V at JC = 5 × 104 A/cm2 and the DC current gain β is 43.
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