Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f/sub max/=425 GHz

S Lee,S Krishnan,Y Wei,M Urteaga,M Dahstrom,M Rodwell,H.J Kim

doi:10.1109/gaas.2001.964374

Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f/sub max/=425 GHz

S Lee, S Krishnan + Show 5 more

https://doi.org/10.1109/gaas.2001.964374

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Publication Date: Oct 21, 2001

Affiliation: University of California, Santa Barbara

#Double Heterojunction Bipolar Transistors #Power Gain Cut-off Frequency + Show 8 more

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Abstract

We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) with power gain cut-off frequency f/sub max/=425 GHz and current gain cut-off frequency f/sub t/=141 GHz using transferred-substrate technology. This is the highest reported f/sub max/ for a DHBT. The breakdown voltage BV/sub CEO/ is 8 V at J/sub C/=5/spl times/10/sup 4/ A/cm/sup 2/ and the DC current gain /spl beta/ is 43.

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