Abstract
Heterogeneous crystalline semiconductor nanomembrane (NM) integration is investigated for single-layer and double-layer Silicon (Si) NM photonics, III-V/Si NM lasers, and graphene/Si NM total absorption devices. Both homogeneous and heterogeneous integration are realized by the versatile transfer printing technique. The performance of these integrated membrane devices shows, not only intact optical and electrical characteristics as their bulk counterparts, but also the unique light and matter interactions, such as Fano resonance, slow light, and critical coupling in photonic crystal cavities. Such a heterogeneous integration approach offers tremendous practical application potentials on unconventional, Si CMOS compatible, and high performance optoelectronic systems.
Highlights
Heterogeneous integration is one of the highly demanded technique for a long time in the semiconductor industry
A thin SiO2 buffer layer was first formed by thermal oxidation on a silicon on isolator (SOI) substrate (Figure 6(b1)), the Cr/Au global alignment cross marks were defined by e-beam lithography (EBL) and lifted-off (Figure 6(b2)), followed by Si photonic crystal slab (PCS) EBL patterning and reactive-ion etching (RIE) etching of the bottom Si PCS layer
Reproduced with permission from [46]. Another significant challenge in practical large-area III-V is the reliability of III-V NM due to their fragile material property; to overcome such a weak mechanical property, we previously developed the method of strengthen III-V NM by supporting it with an additional metal layer, called a frame-assisted membrane transfer (FAMT) process [47]
Summary
Heterogeneous integration is one of the highly demanded technique for a long time in the semiconductor industry. Over the past few years, a polydimethylsiloxane (PDMS) stamp transfer printing process, pioneered by Rogers et al [3,16], has been developed for the transfer of crystalline semiconductor NMs onto any substrates, for multi-layer stacking and integration onto silicon, glass, or polymer substrates [3,4,14,17,18,19] Based on this disruptive NM platform, a new class of photonic structures and devices has been demonstrated [3,4,8,12,14,17,18,19,20,21,22,23,24,25,26]. Enabled by the transfer printing on flexible substrates, many unconventional wearable, conformal optoelectronic devices/systems can be achieved [27,28,29,30,31]
Sign-in/Register to view highlights & summary 
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call