Abstract
We present on our progress in the design, fabrication, and characterization of light-emitting transistors based on twodimensional materials (2D-LETs) and top-gate dielectrics that enable voltage-controlled wavelength-agile light emission spanning from the visible (VIS) to the near-infrared (NIR) spectrum at room temperature. Monolayer transition metal dichalcogenide (TMD) devices (e.g. MoS<sub>2</sub>, MoSe<sub>2</sub>, WS<sub>2</sub>, WSe<sub>2</sub>) emit in the VIS-NIR range with respect to their direct bandgaps. The wavelength of the light emission from the TMD devices may be tuned to the NIR by reducing their direct bandgaps via the giant Stark Effect.
Published Version
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