Performance evaluation of pass-transistor-based circuits using monolayer and bilayer 2-D transition metal dichalcogenide (TMD) MOSFETs for 5.9nm node

Abstract

We comprehensively evaluate and benchmark the performance of pass-transistor logic (PTL) circuits using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on ITRS 2028 node. Our study indicates that the higher V T of bilayer TMD devices significantly degrades the performance of single pass-transistor based circuits compared with the monolayer counterparts despite the higher mobility of bilayer TMD devices. The effect can be mitigated by using full transmission gate or providing a complementary path.