Abstract
The path to achieving integrated RF and power conversion circuitry using the β-Ga2O3 material system is described with regard to the materials high Johnson's RF figure of merit. Recent results, including large signal data at VD = 50 V, are provided, showing progress in achieving high-voltage RF operation. Additionally, progress in achieving high-gain devices through gate length scaling is also benchmarked by a record RF power device with a gate length of 0.5 μm achieving a 2.1 GHz μm fT−LG product. These results are compared with state-of-the-art RF devices, and the expectations for β-Ga2O3 at this point in its maturity throughout this Letter with future milestones laid out to measure progress. The conclusion includes near- and long-term projections for β-Ga2O3 devices for RF based on the results and projected milestones presented.
Highlights
Material figures of merit (FOM) such as those presented by Baliga,[1] Huang,[2] and Johnson[3] distill device physics to the level of material parameters for the comparison of different material systems’ ultimate ability to create devices
Baliga’s FOM for DC switch power loss, which describes the trade between on-resistance and breakdown voltage, can be used in real devices to estimate the doping concentration and the drift region length necessary to achieve a particular operating voltage of a DC switch
The final switch can be benchmarked against the FOM to determine if the full capability of the material system was achieved or it can be compared with the theoretical performance of other material systems
Summary
Material FOMs such as those presented by Baliga,[1] Huang,[2] and Johnson[3] distill device physics to the level of material parameters for the comparison of different material systems’ ultimate ability to create devices.
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