Abstract
Hydrogen plasma surface cleaning of Si at 600°C and the surface stabilization with arsenic-vapor at lower temperature were employed for heteroepitaxial growth of InSb on Si with large lattice mismatch of 19%. The passivated Si surface showed 1×1 structure and was stable even in air. InSb was successively grown in hydrogen plasma on the Si surface at 450°C with controlled Sb/In supply ratio. Initial buffer layer grown at 210°C with four average monolayers was found to be optimum with suppressed three-dimensional nucleation and strain with the longitudinal lattice mismatch around 12–13%. Hall mobility of 2 μm thick heteroepitaxial InSb film on Si successively grown by the total plasma process was 1.2×10 4 cm 2/Vs at room temperature, compared to the lower value of 3×10 3 cm 2/Vs for the polycrystalline film.
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