Total ionizing dose effects of 60Co-γ ray radiation on the resistive switching and its bending performance of Al-in-O/InOx-based flexible RRAM device

Abstract

Flexible resistive switching random access memory (RRAM) device is one of the promising candidates for non-volatile memory used in space because of its features such as simple structure, high speed, low power consumption, durability and lightweight with reduction in thickness. Al-In-O/InOx self-mixing layer can be applied for flexible RRAM due to its low annealing temperature (i.e. temperatures<180 °C), forming-free resistive switching characteristics and low SET and RESET voltage. Herein, effects of the total ionizing dose of 60Co-γ ray radiation on the resistive switching, the bending performance of the prepared flexible RRAM devices based on the Al-In-O/InOx films were studied. The results indicated that the resistance decreases with the bias in high resistance state (HRS) and the SET voltages of the device decrease very slightly after irradiation, while the low resistance state (LRS), RESET voltage, and retention parameters are almost immune to radiation. Moreover, after irradiation, the decrease of resistance with the bias in HRS becomes more exacerbated when bended. Mechanism of bending on the RS is studied by the first-principles calculation, and the mechanism underlying the irradiation effect is studied from the viewpoint of the origin of RS.