Abstract
Total-dose and single-event-effect radiation characterization of 0.25 micron test macro SRAMs fabricated at IBM's East Fishkill research foundry in un-hardened bulk and un-hardened partially-depleted SOI silicon, are reported. The design and fabrication process were optimized for high-performance and short access time using supply voltages of 2.5 V for the 64 K-bit and 1.8 V for the 144 K and 288 K-bit test macro SRAMs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
