Abstract
In this review of experimental studies, the retention time and endurance of memristor RRAM memory elements based on reversible resistive switching in oxide dielectrics are studied. The influence of external parameters—switching pulses and ambient temperature—as well as internal factors—evolution of the concentration of oxygen vacancies in the filament region, the material, structure; the thickness of the active dielectric layer, material of metal electrodes on the long-term stability of high resistance state (HRS) and the low resistance state (LRS) of the memristor is discussed.
Highlights
Due to the promising prospects for the construction of nonvolatile memory ICs of terabit capacity and applications for neuromorphic computing [1], the number of studies in the field of memory devices based on resistive switching in dielectrics has grown exponentially
In memory cells based on resistive switching mechanisms (ReRAM), an ideal dielectric is not needed, but the structure of its local defect regions have to be limited to the nanoscale
In [78], a formless W/AlOx/Al2O3/Pt/Ti memristor was obtained with a high switching speed (28 ns). The study of this memristor at high and low temperatures relative to room temperature showed a decrease in the high resistance state (HRS)/low resistance state (LRS) resistance ratio (~103 at 100, ∼103 at 298, and ∼80 at 400 K) and retention time (∼106 s at 100 K, ∼104 s at 400 K) at elevated temperatures
Summary
Due to the promising prospects for the construction of nonvolatile memory ICs of terabit capacity and applications for neuromorphic computing [1], the number of studies in the field of memory devices based on resistive switching in dielectrics has grown exponentially. It was found that for a memristor with a filament of a larger cross section, a decrease in resistance is observed in the HRS and an increase in resistance in the LRS for filaments with a smaller cross section This result suggests that the degradation of the LRS and HRS states in the study of retention time is primarily determined by diffusion processes. It was observed that with an increase in the number of switching cycles, the time period during which the LRS state is maintained increases, while the time period for which the HRS is maintained decreases This reduces the dispersion of resistances from device-to-device. Various factors are discussed that affect the endurance and retention time of information in memristor memory cells
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