Abstract
We have newly found that reversible resistive switching occurs at room temperature in a Bi4Ti3O12 thin film deposited by electron cyclotron resonance sputtering. The resistive switching was observed in several stacked capacitor structures regardless of the combination of top and bottom electrodes, such as Au, Pt/Ti, and Ru, though the details of current–voltage characteristics were slightly different. The large magnitude of the resistance ratio in low-resistance and high-resistance states, reversible switching with voltage pulses, and long-term retention characteristics are described. Resistance in the low-resistance state hardly depended on neither the area of the electrode pad nor the thickness of bismuth titanate films. We speculate that reversible resistive switching is caused by the creation and annihilation of a conducting path.
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