Abstract
In this paper, the bipolar resistive switching properties of Ge2Sb2Te5 material are studied. By changing the voltage step, compliance current, cycle number and other parameters, the characteristics of the resistive switching voltage, switching ratio, switching polarity and cycle repetition of Ge2Sb2Te5 were tested. The experimental results show that the Ge2Sb2Te5 material film exhibit reversible and reproducible bi-stable resistive switching with lower threshold voltage. The reversible resistance switching between HRS and LRS was induced by bias amplitude and polarity. The electrical resistance ratio of HRS/LRS was ~80:1. After 100 test cycles, the ratio of high resistance state (HRS) and low resistance state (LRS) is not obviously changed, which indicates that the Ge2Sb2Te5 material has excellently nonvolatile bipolar resistance storage characteristics.
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