Abstract
In this paper, we demonstrate a wet treatment for the HfSix/HfO2 gate stack of n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated by a gate-last process in order to scale down the electrical thickness at inversion state Tinv value and reduce the gate leakage Jg. As a result, we succeeded in scaling down Tinv to 1.41 nm without mobility or Jg degradation by ozone–water-last treatment. We found that a high-density interfacial layer (IFL) is formed owing to the ozone–water-last treatment, and Hf diffusion to the IFL is suppressed, which was analyzed by high-resolution angle-resolved spectroscopy.
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