Abstract
Very simple, cheap and two step method was employed for the preparation of SnO2/Si heterojunction device. SnO2 Nanoparticles was fabricated successfully using LP-PLA system, at which ablation of pure Sn metal target in DIW was done using 532.5µm , 9nsec, Q-switching, Nd:YAG laser. X-Ray diffraction pattern show a Highly oriented nanostructure film related to SnO2 wurtize structure. The heterojunction device performance revealed a good rectification and photore- sponce and found to be of abrupt type.
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