Abstract
Tin dioxide thin films were prepared by a direct photochemical vapour deposition method. The raw material was tin(II) acetate. A 6W low-pressure mercury lamp was used as a light source. At a substrate temperature above 150°C, the thin film was obtained in air with a deposition rate which is higher than that for thermal chemical vapour deposition. UV irradiation without premixing oxygen gas improves crystallinity, suppressing the intrusion of carbon contamination.
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