Silicon dioxide thin films prepared by photochemical vapor deposition from silicon tetraacetate

Abstract

Silicon dioxide thin films were prepared by a direct photochemical vapor deposition method. The raw material was silicon tetraacetate which is non-toxic and easy to handle. A 6 W low-pressure mercury lamp was used as a light source. Thin films were obtained in an inert atmosphere at a substrate temperature of above 110°C. The deposition rate was higher than for thermal chemical vapor deposition, which is only possible in the presence of oxygen gas.