Abstract
a-Si:H films are deposited by direct photochemical vapor deposition using a vacuum ultraviolet light (147 nm) emitted from a microwave-excited Xe resonance lamp. The hydrogen concentration is estimated to be less than 9 at.% for deposition temperatures ranging from 200 to 300°C. The hydrogen bonding configuration is mainly Si-H. Defect densities estimated from below-gap absorption coefficients reach 2.2×1015 cm-3. Mobility-gap Eµ measured using an internal photoemission method is about 1.80 eV, which is 0.05 eV larger than its optical gap Eopt of 1.75 eV. The difference between Eµ and Eopt is smaller than that of conventional GD films, which suggests that localized state densities at the band edges are lower.
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