Abstract
Dynamical behavior of radiative recombination has been assessed in the InxGa1−xN (x=0.13, 0.35 and 0.45) single quantum well (SQW) light emitting diodes (LEDs) by means of the time-resolved electroluminescence (TREL) spectroscopy. It was found that EL linewidth, Stokes shift, values of radiative lifetime (τrad) are raised with In compositions. This result qualitatively agrees with the mesoscopic effect where the oscillator strength of excitons is lowered upon increasing the degree of localization.
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