Abstract
The structures of InxGa1−xN single quantum wells (SQWs) on 3-μm-thick GaN layer for the ultraviolet, blue, and green light-emitting devices were investigated by coaxial-impact collision ion scattering spectroscopy (CAICISS). The possibility that CAICISS could analyze structural fluctuation of the ternary system like InxGa1−xN was demonstrated. It was found that In incorporated into InGaN SQWs occupied the substitutional site of Ga atom having Ga-face (+c) polarity.
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