Abstract
The performance of fully depleted silicon on insulator (FDSOI) device and ferroelectric-gated FDSOI (FE-FDSOI) device are investigated for various gate voltage sweep rates. Regardless of the gate voltage sweep rates, the input transfer characteristics of the baseline FDOSI device are not varied. On the contrary, it was observed that the hysteresis width of the FE-FDSOI device is affected by the gate voltage sweep rates. As the gate voltage sweep rate decreases, the ratio of ferroelectric remnant polarization to coercive voltage (Pr/Vc) increases, so that the magnitude of the ferroelectric negative capacitance (|CFE|) increases. This affects hysteresis condition of the FE-FDSOI device, therefore, the hysteresis width of the FE-FDSOI device decreases as the gate voltage sweep rate decreases. According to the results, it is suggested that voltage sweep rate be decreased to decrease the hysteresis width of FE-FDSOI device.
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