Abstract
Planar ultra-thin body and box (UTBB1–3) fully depleted silicon on insulator (FDSOI) devices have many advantages for future low-cost energy-efficient applications. However, process steps for scaling to ultra-thin FDSOI devices can be difficult to control, and extrinsic resistance can hinder any performance improvement. In this paper, we present a novel planar U-channel UTBB FDSOI device that can alleviate these problems.
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