Abstract
This paper aims at modeling of Fully Depleted Silicon on Insulator (FDSOI) device. This work also investigates electrical characteristics like threshold voltage and subthreshold slope of the FDSOI device. The device is modeled using Silvaco Atlas 2-D numerical simulator and the electrical characteristics are simulated using the same. It is seen that the threshold voltage and subthreshold slope of the modeled device is 0.1 V and 79 mV/decade respectively. The results show that the modeled device (FDSOI) exhibits excellent characteristics. It also states that the FDSOI device is worthwhile for ultralow power operation. This device finds its aptness in Internet of Things (IoT) technology.
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