Abstract
The Sb desorption process from Sb-terminated GaAs(001) substrates has been analysed by time-resolved core-level photoelectron spectroscopy to investigate the influence of the substrate on the desorption. From the time dependence of the Ga 3d intensity, and the spectrum changes of Ga 3d and Sb 4d under Sb flux and during Sb desorption, three series of time constants for Sb desorption were found and activation energies of 2.5 eV and 1.1 eV were obtained for two of the desorption series. Spectrum analysis clarified that Sb double layers lie on the surface under Sb flux exposure and that Sb atoms corresponding to activation energies of 2.5 and 1.1 eV desorb from the topmost site of the Sb double layers. This is the same in the case of GaSb (001) substrate without the activation energy and shows that the bonding strength between the Sb atoms of the topmost layer site and the second layer site depends on the substrate materials.
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