Time-resolved core-level photoelectron spectroscopy and reflection high-energy electron diffraction study of surface phase transition on GaAs(0 0 1)

Abstract

The surface phase transition on GaAs(001) was investigated in real time by core-level photoelectron spectroscopy and reflection high-energy electron diffraction (RHEED). The time dependence of the relative surface band bending was obtained from the deconvolution of core-level photoelectron spectra. We found that band bending on the 4 × 2 surface increases 0.06eV from that of the 2 × 4 surface and that the time dependence of relative surface band bending is in good agreement with that of core-level photoelectron intensities but not with the RHEED intensities. This indicates that the long-range ordering of surface superstructures and microscopic surface morphology does not influence surface band bending, whereas the termination atoms, As or Ga, does.