Abstract
Abstract The process of Sb desorption from GaSb(001) and Sb-terminated GaAs(001) was investigated by using a real-time analysis system that uses time-resolved core-level photoelectron spectroscopy. From the photoelectron intensity analysis, two competing processes with fast and slow time constants were found on the Sb desorption from both substrates and the activation energies were determined to be 0.71 eV and 0.90 eV for GaSb(001) and 1.1 eV and 2.5 eV for Sb-terminated GaAs(001). We investigated the relationship between the activation energies and surface bonding structure using spectrum differences based on the assignment of conventional core-level photoelectron spectroscopy of the surfaces whose Sb coverage is well controlled. This indicated that the activation energy of the desorption related to the transition from 2×8 to 2×4 of an Sb-terminated GaAs(001) is larger than the other desorption processes and it can be explained that the large potential barrier for bonding structure rearrangement between 2×8 superstructure and 2×4 superstructure exist in addition to Sb atoms desorption.
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