Abstract
The blinking phenomenon in InGaN single quantum wells is a phenomenon where localized photoluminescence changes over time. Understanding its physics is important for the manufacture of more efficient light emission diodes. We present a study using two InGaN single quantum well samples, emitting at 460 and 510 nm wavelength, respectively. We confirmed that the luminescence intensity fluctuates in localized blinking regions, and we found that these optical variations are not random but are instead correlated in pairs, with either positive or negative coefficient, to a distant reference blinking point. Measurements were performed to obtain standard deviation and cross-correlation maps. Invoking the quantum confined Stark effect, we realized a simple phenomenological model that shows how charge carriers are exchanged among pairs of adjacent opposite correlation regions. As a result, it is suggested that the phenomenon is caused by fluctuations in the number of these exchanged carriers. Our model gives an explanation for the blinking phenomenon in InGaN single quantum wells, and it is important for a deeper understanding to InGaN-based materials.
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