Abstract
Controlling the long-range homogeneity of core–shell InGaN/GaN layers is essential for their use in light-emitting devices. This paper demonstrates variations in optical emission energy as low as ∼7 meV·μm–1 along the m-plane facets from core–shell InGaN/GaN single quantum wells as measured through high-resolution cathodoluminescence hyperspectral imaging. The layers were grown by metal organic vapor phase epitaxy on etched GaN nanorod arrays with a pitch of 2 μm. High-resolution transmission electron microscopy and spatially resolved energy-dispersive X-ray spectroscopy measurements demonstrate a long-range InN-content and thickness homogeneity along the entire 1.2 μm length of the m-plane. Such homogeneous emission was found on the m-plane despite the observation of short-range compositional fluctuations in the InGaN single quantum well. The ability to achieve this uniform optical emission from InGaN/GaN core–shell layers is critical to enable them to compete with and replace conventional planar light-e...
Highlights
I nGaN/GaN core−shell nanorod light emitting diodes (LEDs) have the potential to overcome the limitations of current-generation planar devices
The growth of such InGaN quantum wells (QWs) on NRs often suffers from a gradient in InGaN composition and thickness along the nonpolar length of the nanorods.[3−6] While this phenomenon can be exploited for applications requiring broad absorption or emission bands, it will lead to strong emission wavelength shifts with drive current
In comparison to QWs in a conventional c-plane MQWs LED, all can be classified as a wide single quantum well (SQW), being wider than the expected exciton Bohr radius.[27]
Summary
I nGaN/GaN core−shell nanorod light emitting diodes (LEDs) have the potential to overcome the limitations of current-generation planar devices. The uniformity of the optical emission of the GaN/InGaN/ GaN core−shell structures was assessed by room-temperature high-resolution cathodoluminescence (CL) hyperspectral imaging.[32] The measurement conditions can be found in the Experimental Details.
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