Abstract
Graphene nanoribbons must have smooth, armchair edges, sub-10nm widths, lengths greater than 100nm, controlled placement and orientation to achieve easy integration into semiconductor electronics. However, fabricating ribbons possessing all of these properties has eluded current methods in literature. Here, we demonstrate the seed-mediated growth of graphene nanoribbons on Ge (001) through chemical vapor deposition. Through the use of graphene seeds, aligned, registered arrays of graphene nanoribbons are fabricated with pitches (seed to seed distance) varying from 50 to 500 nm. Ribbon width and length show no relation with pitch, indicating growth is attachment limited and does not depend on nanoribbon separation. Arrays of unidirectionally aligned, armchair edged nanoribbons with lengths greater than 200 nm and sub-10 nm widths are fabricated for the first time.
Published Version
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