Abstract
We have designed and prepared a T-shaped GaAs edge quantum wire (T-QWR) structure with AlAs barriers by cleaved edge overgrowth method. Three photoluminescence (PL) peaks have been observed and their origins are identified using the spatially resolved PL technique. The effective binding energy of carriers in this T-QWR is precisely determined as the energy spacing between T-QWRs and the adjacent QWs. When the well width of constituent QWs was 5 nm, the effective binding energy is found to be as large as 35 meV, which is far beyond the thermal energy kT at room temperature.
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