Abstract
Optical anisotropy has been evaluated in terms of polarization dependence of photoluminescence (PL) and PL excitation (PLE) spectra for 5-nm-scale GaAs/AlAs T-shaped quantum wires (T-QWR's). They were prepared by the cleaved-edge overgrowth method, and their potential profile was previously characterized by spatially resolved PL measurements. The PL and PLE signals for T-QWR's showed stronger polarization along the T-QWR's. Comparing T-QWR's with a reference QW grown on a (110) surface, we clarified the optical anisotropy induced purely by the lateral confinement in T-QWR's.
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