Monolayer-fluctuation-free interface formation by the cleaved-edge overgrowth method with growth Interruption for uniform quantum wires and wells

Abstract

Summary form only given. The T-shaped quantum wires (T-QWRs) have been successfully fabricated by cleaved-edge overgrowth (CEO) and MBE. They showed unique one-dimensional properties. However, the difficulty of this growth method still lies in growth of high-quality GaAs layer on the [110] cleaved surface, which requires low growth temperature around 480-500/spl deg/C and high As flux. In fact, photoluminescence (PL) linewidths of the [110] quantum wells (QWs) and T-QWRs by CEO have been still broader than that of the conventional [001] QWs. In order to fabricate high-quality T-QWRs, further understanding and improvement of the growth of the GaAs layer on the [110] cleaved edge is required.