Abstract
We report, in this paper, the formation of Ti–Si compounds by direct Ti-ion implantation into silicon substrates with a metal vapor vacuum arc ion source. Implantation was conducted with an extract voltage of 40 kV. The implantation doses were 1×10 17, 2×10 17 and 5×10 17 cm 2 and the substrate temperature ranged from 450°C to 640°C. The obtained Ti–Si compounds varied with the change of the implantation dose and the substrate temperature. With the increase of both implantation dose and temperature, the formation of C54-TiSi 2 phase was favored. When the implantation dose was increased to 1×10 18 cm 2 and the implantation was conducted at 640°C, pure C54-TiSi 2 phase was fabricated.
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