Abstract
Current research endeavor encompasses comprehensive threshold voltage analysis of a Gaussian-doped Dual work function Material (DM) Cylindrical Gate-all-around (CGAA) MOSFET with temperature variance in presence of fixed interface trap charges. Threshold voltage reliability over a wide range of temperature in presence of trap charges and its Gaussian-parameters such as projected range and straggle based dependencies are exhibited. Short channel response of the device has also been considered. Analytical results are corroborated through simulation outputs from Atlas.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
