Abstract
We investigate the time-dependent shift in the threshold voltage of amorphous silicon thin-film transistor stressed with constant drain current. We observe a nonsaturating power-law time dependence, which is in contrast to the conventional stretched exponential that saturates at prolonged stress time. The result is consistent with the carrier-induced defect creation model and corroborates the nonlinear dependence of the rate of defect creation on the band-tail carrier density.
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