Abstract
Effect of stress in passivation films on shift in the threshold voltage of GaAs transistors is analyzed using a finite element method. Stress field devoloped in the transistor structure is analyzed by considering thermal stress and intrinsic stress of thin films. Localized polarization and the stress-induced-charge density devoloped in the transistor structure are calculated by considering both the piezoelectric effect of GaAs and the predicted stress field in the transistor structure. It is possible to quantitatively predict the shift in the threshold voltage of the transistor, which is mainly caused by the passivation-film stress, by integrating the calculated density of the stress-induced charge in the transistor area. The minimum shift of about 0.1V is obtained when the film stress is -50MPa. The predicted shift in the threshold voltage agrees well with the measured result.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
