Abstract
Threshold voltage hysteresis in SiC power MOSFETs is rarely studied. This work investigates the capture- and emission-time constants of positive and negative charge trapped in the gate oxide and interface as a function of gate bias. We present a measurement technique which enables measurement of the real Vth during application-relevant bipolar AC gate stress. We show that threshold voltage hysteresis has no harmful effect on switching operation.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
