Abstract
Statistical distribution of the threshold voltage Vth for more than 90 Pt/SrBi2Ta2O9/Hf–Al–O/Si ferroelectric-gate field-effect transistors (FeFETs) is reported for both p- and n-channel devices. The average memory window is nearly 1.2 V at the sweep voltage amplitude of 5 V (between −4 V and 6 V for the p-channel, and ±5 V for the n-channel). The standard deviations of Vth are about 7–8% and 3–5% of the memory window for the p- and n-channel FeFETs, respectively. The result indicates a promising level of demonstrating a small-scale circuit by using this technology.
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