Abstract
A novel structure of metal/a-Si:H/c-Si( p- n) (MASS) heterojunction threshold switching device was successfully developed. Three types of structures of devices are discussed. A typical structure is Cr/a-Si:H(i = 300 A ̊ )/ c-Si(p = 16 μm)/ c-Si(n-n +) of the device, for which the switching voltage and holding voltage are 31 and 5 V, respectively. The corresponding switching current and holding current are 0.5 and 2.6 mA, respectively. All these characteristics are increased with the thickness of the a-Si:H i layer. The device can also be used as a light-controlled switching device, and sensitive in the visible light wavelength range. The minimum triggering optical power is 25 μW and the speed of response to light is 12–15 μs.
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