Abstract
Electrical switching in thin selenium films is studied. Devices with two metal electrodes are compared with those having one indium oxide contact. dc, single, and double pulse studies are utilised in conjunction with scanning electron microscopy in an attempt to investigate the structural and compositional changes occurring during switching. The results indicate that lock-on and threshold switching are complementary processes and that the memory state is associated with metal ion diffusion. Thermal effects appear to be of importance in threshold switching. Das elektrische Schalten dunner Selenschichten wird untersucht. Bauelemente mit zwei Metallelektroden werden mit solchen verglichen, die einen Indiumoxidkontakt haben. Gleichspannungs-, Ein- und Doppelimpulsuntersuchungen werden zusammen mit Rasterelektronenmikroskopie durchgefuhrt, um Struktur und Zusammensetzungsanderungen zu untersuchen, die wahrend des Schaltens auftreten. Die Ergebnisse zeigen, das “Lock-on”- und Schwellenschalten komplementare Prozesse sind und das der Speicherzustand mit Metallionendiffusion verknupft ist. Thermische Effekte scheinen beim Schwellenschalten wesentlich zu sein.
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