Abstract
I-V characterization of the bulk and amorphous thin film of the as-prepared Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</inf> Te <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">80</inf> Cu <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf> sample is carried out to better perceive the electrical switching behavior. Memory and threshold switching have been discerned in bulk glass, but only memory switching has been shown by amorphous thin films. The thin film device exhibits a substantially lower threshold voltage than its bulk version, suggesting that it could be used for phase change memory (PCM). The glass is subjected to Set –Reset using a triangle pulse of 6 mA for set operation and a rectangle pulse of 12 mA for reset operation to determine the suitability of the provided glass for PCM use. A constant recurrence of a few Set-Resets is evident in this study. Morphological study has also been carried out on the bulk sample.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
