Abstract
Ion range and damage distributions — in insulators also ionization distributions — are of increasing relevance for modern semi conductor (VLSI) developments. With small dimensions also the lateral distributions need to be considered. In both longitudinal and lateral profiles, strong deviations from the commonly used Pearson IV or Gaussian distributions are found and shall be demonstrated with Monte Carlo results. In the Monte Carlo calculations the contributions of the moving recoils to ionization and damage production can be studied explicitly. In cases of heavy ions incident on a lighter target, the fluxes of recoils can be larger than the ion beam flux, and the ionization and damage profiles are drastically enhanced and shifted, due to the motion of recoils.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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