Abstract
The distribution of damage in Si and He implanted GaAs has been studied using differential reflectance (DR) spectroscopy. This novel and relatively simple optical technique has high sensitivity and allows the measurement of damage distributions in a low dose range which is difficult to access by other techniques (1 × 10 10−3 × 10 14 cm −2). The effect of crystal orientation ((100), (110) and (111) directions) on the damage profiles has also been measured. The measured damage profiles, obtained by successively etching the sample and measuring the DR signal, have been compared with TRIM simulations. The magnitude and shape of the damage profiles were found to be very sensitive to crystal orientation.
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