Lattice location and electrical conductivity in ion implanted TiO 2 single crystals

Abstract

Single crystals of TiO 2 (rutile) were implanted at room temperature with Ar, Sn and W ions applying fluences of 10 15/cm 2 to 10 16/cm 2 at 300 keV. The lattice location, together with ion range and damage distribution was measured with Rutherford Backscattering and Channeling (RBS-C). The conductivity, σ, was measured as a function of temperature. The implanted Sn and W atoms were entirely substitutional on Ti sites in the applied fluence region, where the radiation damage did not yet reach the random level. A large σ increase was observed for all implants at displacement per atom values (dpa) below 1. Above dpa = 1, σ reveals a saturation value of 0.3 Ω −1 cm −1 for Ar implants, while for W and Sn implants a further increase of σ up to 30 Ω −1 cm −1 was measured. Between 70 K and 293 K ln σ was proportional to T −1 2 , (Ar,W) and T −1 4 (Sn), indicating that the transport mechanism is due to variable range hopping.