Three-dimensional Simulation and Analysis of Spray Structure inVertical MOCVD Reaction Chamber

Abstract

In the vertical spray MOCVD reactor, a spray structure composed of fan bodies was proposed. CFD was used to simulate the gas deposition process in GaN-MOCVD reactor. The characteristics of changing the concentration of reaction gas above the substrate surface with the height of the fan, the distance between the spray nozzle and the substrate surface, and the substrate rotation speed were given. Compared with the traditional spray structure, the cylindrical spray structure composed of fan body can effectively reduce the premixing problem of reaction gas sprayed from the spray nozzle before entering the reaction chamber and reaching the substrate surface. At the same time, the simulation structure shows that when other conditions are fixed, with the increase of the fan height, the increase of the distance between the spray nozzle and the substrate surface and the acceleration of the substrate rotation speed, the uniformity of GaN deposition on the substrate surface can be better under the same isolation effect, so that the utilization rate of TMG can be as high as possible under the condition that the uniformity is satisfied.