Abstract
A new susceptor structure with a ring groove on the conventional column-shaped graphite susceptor is proposed for the vertical and induction heating MOCVD reactor, aimed at dividing the inner heat of susceptor into two parts, one of which accumulates on the upside and the other downside of the groove. The shape of the ring groove that changes the directions of heat conduction in the susceptor is optimized and validated by using finite element method (FEM). Compared with the conventional one, the optimized susceptor improves the uniformity of temperature distribution in the wafer and consequently promotes the growth characteristics.
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