Abstract
Chemical vapor deposition (CVD) is a widely used process for the fabrication of thin solid films with applications in electronics, optics, and surface property modifications. Results from a three dimensional numerical model to predict silicon deposition characteristics in a cold wall ‘barrel’ type CVD reactor are presented. A simplified reactor geometry with a circular cylindrical susceptor is considered. Equations of conservation of mass, momentum, energy, and chemical species are numerically solved. Chemical reactions are allowed in the gas phase and on the heated susceptor. The effects of injection angle, susceptor, and wall temperatures, and the rotation speed of susceptor on silicon deposition rates are presented and discussed.
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