Abstract
Aberration correction in scanning transmission electron microscopy has more than doubled the lateral resolution, greatly improving the visibility of individual impurity or dopant atoms. Depth resolution is increased five-fold, to the nanometer level. We show how a through-focal series of images enables single Hf atoms to be located inside an advanced gate dielectric device structure to a precision of better than 0.1 × 0.1 × 0.5 nm . This depth sectioning method for three-dimensional characterization has potential applications to many other fields, including polycrystalline materials, catalysts and biological structures.
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