Abstract
A lateral polysilicon Bipolar Charge Plasma Transistor (poly-Si BCPT) on undoped recrystallized polycrystalline silicon which is compatible with the thin-film field effect transistor (TFT) fabrication is reported in this paper. Using calibrated two-dimensional device simulation, the electrical performance of the poly-Si BCPT is evaluated in detail by considering the position of the single grain boundary. Our simulation results demonstrate that the poly-Si BCPT has the potential to realize low-cost thin-film polycrystalline silicon bipolar transistors with large current gain and cut-off frequency making it suitable for a number of applications including the driver circuits of the displays.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.