Abstract
A single grain boundary tunnel field effect transistor (TFET) on recrystallized polycrystalline silicon is reported in this letter. By varying the position of the grain boundary (GB) in the channel, the performance of the proposed device is evaluated using calibrated 2-D simulations. Our results show the possibility of realizing low-cost thin-film recrystallized polycrystalline tunnel FETs with low OFF-state current and low subthreshold swing compared with the thin-film transistors. By introducing the source N + pocket doping, it is also shown that the proposed single GB PNPN TFET exhibits enhanced ON-state current, making it suitable for low power display applications, including the driver circuits.
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